Title:
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE CONSISTING OF SILICON-CARBIDE AND COMPRISING A SCHOTTKY CONTACT
Document Type and Number:
WIPO Patent Application WO2001022474
Kind Code:
A3
Abstract:
The invention relates to the production of a SiC semiconductor device with a Schottky contact. A SiO2-protective layer (150) is produced on a surface (21) of an alpha -SiC semiconductor area (11) by means of dry thermal oxidation. After at least one additional procedure step, the SiO2-protective layer (150) is removed again in the area of a contact window (160). A Schottky contact layer (110) is subsequently mounted to the surface (21) in the area of the contact window (160).
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Inventors:
FRIEDRICHS PETER (DE)
PETERS DETHARD (DE)
SCHOERNER REINHOLD (DE)
PETERS DETHARD (DE)
SCHOERNER REINHOLD (DE)
Application Number:
PCT/DE2000/003148
Publication Date:
October 11, 2001
Filing Date:
September 11, 2000
Export Citation:
Assignee:
SICED ELECT DEV GMBH & CO KG (DE)
FRIEDRICHS PETER (DE)
PETERS DETHARD (DE)
SCHOERNER REINHOLD (DE)
FRIEDRICHS PETER (DE)
PETERS DETHARD (DE)
SCHOERNER REINHOLD (DE)
International Classes:
H01L21/04; (IPC1-7): H01L21/285; H01L21/329
Domestic Patent References:
| WO1997027629A1 | 1997-07-31 |
Foreign References:
| US5895260A | 1999-04-20 | |||
| EP0789388A2 | 1997-08-13 |
Other References:
PORTER L M ET AL: "CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL PROPERTIES AT INTERFACES BETWEEN THIN FILMS OF COBALT AND ALPHA (6H) SILICON CARBIDE (0001)", JOURNAL OF MATERIALS RESEARCH,US,NEW YORK, NY, vol. 10, no. 1, 1995, pages 26 - 33, XP000764882, ISSN: 0884-2914
EDMOND J A ET AL: "Electrical contacts to beta silicon carbide thin films", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, FEB. 1988, USA, vol. 135, no. 2, pages 359 - 362, XP000979375, ISSN: 0013-4651
HARA S ET AL: "PINNING-CONTROLLED METAL/SEMICONDUCTOR INTERFACES", PROCEEDINGS OF THE SPIE,US,SPIE, BELLINGHAM, VA, vol. 2779, 3 June 1996 (1996-06-03), pages 802 - 806, XP002068070
PORTER L M ET AL: "Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)", JOURNAL OF MATERIALS RESEARCH, MARCH 1995, USA, vol. 10, no. 3, pages 668 - 679, XP000989719, ISSN: 0884-2914
EDMOND J A ET AL: "Electrical contacts to beta silicon carbide thin films", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, FEB. 1988, USA, vol. 135, no. 2, pages 359 - 362, XP000979375, ISSN: 0013-4651
HARA S ET AL: "PINNING-CONTROLLED METAL/SEMICONDUCTOR INTERFACES", PROCEEDINGS OF THE SPIE,US,SPIE, BELLINGHAM, VA, vol. 2779, 3 June 1996 (1996-06-03), pages 802 - 806, XP002068070
PORTER L M ET AL: "Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)", JOURNAL OF MATERIALS RESEARCH, MARCH 1995, USA, vol. 10, no. 3, pages 668 - 679, XP000989719, ISSN: 0884-2914
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