Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/111498
Kind Code:
A1
Abstract:
Disclosed is a method for producing a semiconductor device, said method comprising: a step for forming a thin film, which is different from a silicon oxide film, on a substrate by feeding a treatment gas to inside of a treatment vessel housing the substrate; a step for removing deposits including the thin film, which is attached inside the treatment vessel, said removal being performed by feeding a fluorine-containing gas to inside of the treatment vessel once the step for forming a thin film has been performed a predetermined number of times; and a step for forming a silicon oxide film, which has a predetermined film thickness, inside of the treatment vessel by alternately feeding a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas, to inside of the treatment vessel which has been heated following the removal of deposits and is at a pressure that is less than atmospheric pressure.
Inventors:
AKAE NAONORI (JP)
MURAKAMI KOTARO (JP)
HIROSE YOSHIRO (JP)
KAMEDA KENJI (JP)
MURAKAMI KOTARO (JP)
HIROSE YOSHIRO (JP)
KAMEDA KENJI (JP)
Application Number:
PCT/JP2011/053508
Publication Date:
September 15, 2011
Filing Date:
February 18, 2011
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
AKAE NAONORI (JP)
MURAKAMI KOTARO (JP)
HIROSE YOSHIRO (JP)
KAMEDA KENJI (JP)
AKAE NAONORI (JP)
MURAKAMI KOTARO (JP)
HIROSE YOSHIRO (JP)
KAMEDA KENJI (JP)
International Classes:
H01L21/316; C23C16/44; H01L21/31
Domestic Patent References:
| WO2007111348A1 | 2007-10-04 |
Foreign References:
| JP2006165317A | 2006-06-22 |
Attorney, Agent or Firm:
YUI Tohru et al. (JP)
Oil well 透 (JP)
Oil well 透 (JP)
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Claims: