METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM

WIPO Patent Application WO/2019/065544

A1

Provided is a technique for modifying a tungsten film formed on a substrate so that the sheet resistance thereof is considerably reduced, thereby forming a tungsten film which has excellent characteristics and is applicable to electrodes and the like. A method for producing a semiconductor device according to the present invention comprises: a step for carrying a substrate, on the surface of which a tungsten film has been formed, into a processing chamber; a step for producing a reactive species by plasma-exciting a processing gas that contains hydrogen and oxygen; and a step for modifying the tungsten film by supplying the reactive species to the substrate. In the step for modifying the tungsten film, the tungsten film is modified so that the crystal grain size of tungsten that constitutes the tungsten film becomes larger than the crystal grain size before the modification step.

JPS5218179	PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
JPS59172735	SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
WO/2021/215336	NITRIDE SEMICONDUCTOR DEVICE

NAKAYAMA MASANORI (JP)
FUNAKI KATSUNORI (JP)
UEDA TATSUSHI (JP)
TSUBOTA YASUTOSHI (JP)
TAKESHIMA YUICHIRO (JP)
IGAWA HIROTO (JP)
YAMAKADO YUKI (JP)

PCT/JP2018/035216

April 04, 2019

September 21, 2018

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KOKUSAI ELECTRIC CORP (JP)

H01L21/28; C23C16/56; H05H1/46

WO2012060325A1

2012-05-10

JPH0521387A	1993-01-29
JPH11145148A	1999-05-28
JP2012151435A	2012-08-09
JP2014032986A	2014-02-20
JP2013182961A	2013-09-12

TAIYO, NAKAJIMA & KATO (JP)

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