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Patent Searching and Data


Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/186636
Kind Code:
A1
Abstract:
The present invention carries out: (a) a step wherein a first metal film is formed by supplying a first metal-containing gas and a first reducing gas a plurality of times to a substrate that has a recess in the surface in such a manner that the first metal-containing gas and the first reducing gas are not mixed with each other; (b) a step wherein a second metal film is formed on the first metal film by supplying at least a second metal-containing gas and a second reducing gas, which is different from the first reducing gas, a plurality of times to the substrate in such a manner that the second metal-containing gas and the second reducing gas are not mixed with each other; and (c) a step wherein at least the second metal film is etched by supplying an etching gas to the substrate.

Inventors:
OGAWA Arito (C/O HITACHI KOKUSAI ELECTRIC INC. 1, Yasuuchi 2-chome Yatsuo-machi, Toyama-sh, Toyama 93, 〒9392393, JP)
Application Number:
JP2018/012089
Publication Date:
October 03, 2019
Filing Date:
March 26, 2018
Export Citation:
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Assignee:
KOKUSAI ELECTRIC CORPORATION (3-4 Kandakaji-cho, Chiyoda-ku TOKYO, 45, 〒1010045, JP)
International Classes:
H01L21/28
Domestic Patent References:
WO2016046909A12016-03-31
Foreign References:
JP2008283220A2008-11-20
JP2003160867A2003-06-06
JP2010153852A2010-07-08
JPH0225568A1990-01-29
JP2001524261A2001-11-27
JP2013080891A2013-05-02
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (21 TOWA BLDG. 3F, 6-1 Iidabashi 4-chome, Chiyoda-k, Tokyo 72, 〒1020072, JP)
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