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Patent Searching and Data


Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/186637
Kind Code:
A1
Abstract:
The present invention comprises: (a) a step for forming a precoat film that has a first etching rate on the surfaces of members within a processing chamber; (b) a step for carrying a substrate which has a recess in the surface into the processing chamber that has been provided with the precoat film; and (c) a step for forming a thin film on the substrate within the processing chamber, said thin film having a second etching rate that is higher than the first etching rate, and at least a part of said thin film being to be etched later.

Inventors:
OGAWA ARITO (JP)
Application Number:
JP2018/012090
Publication Date:
October 03, 2019
Filing Date:
March 26, 2018
Export Citation:
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Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/285; H01L21/302; H01L21/3065; H01L21/31
Foreign References:
JP2010109245A2010-05-13
JP2012251212A2012-12-20
JP2012060036A2012-03-22
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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