Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/102237
Kind Code:
A1
Abstract:
This method for producing a semiconductor device having GaN (gallium nitride) configuring a semiconductor layer is provided with a gate insulating film formation step (F) for, using microwave plasma, forming on a nitride layer having GaN at least one film from among the group consisting of an SiO2 film and an Al2O3 film, and causing the formed film to be at least a portion of a gate insulating film.
Inventors:
TERAMOTO AKINOBU (JP)
KAMBAYASHI HIROSHI (JP)
UEDA HIROKAZU (JP)
MOROZUMI YUICHIRO (JP)
HARADA KATSUSHIGE (JP)
HASEBE KAZUHIDE (JP)
OHMI TADAHIRO (JP)
KAMBAYASHI HIROSHI (JP)
UEDA HIROKAZU (JP)
MOROZUMI YUICHIRO (JP)
HARADA KATSUSHIGE (JP)
HASEBE KAZUHIDE (JP)
OHMI TADAHIRO (JP)
Application Number:
PCT/JP2012/051348
Publication Date:
August 02, 2012
Filing Date:
January 23, 2012
Export Citation:
Assignee:
UNIV TOHOKU (JP)
ADVANCED POWER DEVICE RES ASS (JP)
TOKYO ELECTRON LTD (JP)
TERAMOTO AKINOBU (JP)
KAMBAYASHI HIROSHI (JP)
UEDA HIROKAZU (JP)
MOROZUMI YUICHIRO (JP)
HARADA KATSUSHIGE (JP)
HASEBE KAZUHIDE (JP)
OHMI TADAHIRO (JP)
ADVANCED POWER DEVICE RES ASS (JP)
TOKYO ELECTRON LTD (JP)
TERAMOTO AKINOBU (JP)
KAMBAYASHI HIROSHI (JP)
UEDA HIROKAZU (JP)
MOROZUMI YUICHIRO (JP)
HARADA KATSUSHIGE (JP)
HASEBE KAZUHIDE (JP)
OHMI TADAHIRO (JP)
International Classes:
H01L29/78; H01L21/31; H01L21/316; H01L21/336; H01L21/338; H01L29/778; H01L29/786; H01L29/812
Foreign References:
| JP2008112750A | 2008-05-15 | |||
| JPH05304292A | 1993-11-16 | |||
| JP2009076673A | 2009-04-09 | |||
| JP2009064821A | 2009-03-26 | |||
| JP2009521594A | 2009-06-04 | |||
| JP2010166040A | 2010-07-29 | |||
| JP2010239102A | 2010-10-21 | |||
| JP2005183662A | 2005-07-07 | |||
| JP2008277640A | 2008-11-13 | |||
| JP2010262635A | 2010-11-18 | |||
| JP2010192755A | 2010-09-02 | |||
| JP2008103408A | 2008-05-01 | |||
| JP2008277640A | 2008-11-13 |
Other References:
TSUTOMU UESUGI ET AL.: "Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor", AIP, JOURNAL OF APPLIED PHYSICS, vol. 104, 2 July 2008 (2008-07-02), pages 016103
See also references of EP 2669951A4
See also references of EP 2669951A4
Attorney, Agent or Firm:
ITOH, Hidehiko et al. (JP)
Hidehiko Ito (JP)
Hidehiko Ito (JP)
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Claims:
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