Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/106843
Kind Code:
A1
Abstract:
The present invention is characterized in comprising: forming a barrier layer from InAlN or InAlGaN on a channel layer; forming a transition layer from InGaN on the barrier layer while raising the growth temperature; and forming a cap layer from GaN on the transition layer.
Inventors:
ERA ATSUSHI (JP)
Application Number:
PCT/JP2017/043345
Publication Date:
June 06, 2019
Filing Date:
December 01, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/205
Foreign References:
JP2014239159A | 2014-12-18 | |||
JP2017183696A | 2017-10-05 | |||
JP2007214257A | 2007-08-23 | |||
JP2011238931A | 2011-11-24 | |||
JPH1154794A | 1999-02-26 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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