Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/054318
Kind Code:
A1
Abstract:
The present invention relates to a method for producing a semiconductor device, the method using a double-sided adhesive sheet which has at least an adhesive layer (X1) that serves as the one surface-side outer layer and an adhesive layer (X2) that serves as the other surface-side outer layer, wherein the adhesive layer (X2) is an energy ray-curable adhesive layer and at least one of the layers other than the adhesive layer (X2) is a thermally expandable layer that contains thermally expandable particles. This method for producing a semiconductor device comprises specific steps 1 to 4 in this order, while comprising an energy ray irradiation step at a specific timing.
Inventors:
NAKAISHI YASUNOBU (JP)
SHINODA TOMONORI (JP)
NEMOTO TAKU (JP)
TAMURA SAKURAKO (JP)
KABUTO AKIO (JP)
KAWADA SATOSHI (JP)
SHINODA TOMONORI (JP)
NEMOTO TAKU (JP)
TAMURA SAKURAKO (JP)
KABUTO AKIO (JP)
KAWADA SATOSHI (JP)
Application Number:
PCT/JP2022/035847
Publication Date:
April 06, 2023
Filing Date:
September 27, 2022
Export Citation:
Assignee:
LINTEC CORP (JP)
International Classes:
H01L21/301; C09J7/20; C09J7/30
Domestic Patent References:
| WO2021117695A1 | 2021-06-17 |
Foreign References:
| JP2007250735A | 2007-09-27 | |||
| JP2012184292A | 2012-09-27 | |||
| JP2010278066A | 2010-12-09 |
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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