Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/175820
Kind Code:
A1
Abstract:
The present invention provides a method for producing a semiconductor device, the method comprising: a step in which a first insulating film (20) that has a first opening (20a) is formed; a step in which a first resist (24) that has a second opening (24a) which is larger than the first opening (20a) is formed on the first insulating film (20); a step in which a gate electrode (18) is formed in the first opening (20a), in the second opening (24a), on top of the second opening (24a) and on top of the first resist (24); a step in which a second resist (26) is formed on top of the gate electrode (18) so as to cover at least the vertically upper side of the second opening (24a), the second resist (26) having a wider width than the second opening (24a); a step in which the gate electrode (18) and a portion of the first resist (24) to a midway thereof are etched using the second resist (24) as a mask; a step in which the first resist (24) and the second resist (26) are removed; and a step in which a second insulating film (22), which covers the exposed portion of the gate electrode (18) and the exposed portion of the first insulating film (20), is formed.
More Like This:
Inventors:
NISHIGUCHI KOHEI (JP)
Application Number:
PCT/JP2022/012168
Publication Date:
September 21, 2023
Filing Date:
March 17, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2007091301A1 | 2007-08-16 |
Foreign References:
| JPH0653246A | 1994-02-25 | |||
| JP2011216627A | 2011-10-27 | |||
| JP2003059949A | 2003-02-28 | |||
| JPH05335339A | 1993-12-17 | |||
| JP2009105405A | 2009-05-14 | |||
| US20150144953A1 | 2015-05-28 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
Download PDF: