Title:
METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/104584
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for producing a semiconductor epitaxial wafer, which is capable of increasing the peak concentration of hydrogen in a surface part of a semiconductor wafer after the formation of an epitaxial layer.
A method for producing a semiconductor epitaxial wafer according to the present invention is characterized by comprising: a first step wherein the surface of a semiconductor wafer is irradiated with cluster ions, which contain hydrogen as a constituent element, thereby forming a modification layer, in which constituent elements of the cluster ions including hydrogen are solid-solved, in a surface part of the semiconductor wafer; a second step wherein the semiconductor wafer is irradiated with an electromagnetic wave having a frequency of from 300 MHz to 3 THz (inclusive) after the first step, thereby heating the semiconductor wafer; and a third step wherein an epitaxial layer is formed on the modification layer of the semiconductor wafer after the second step.
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Inventors:
KADONO TAKESHI (JP)
KURITA KAZUNARI (JP)
KURITA KAZUNARI (JP)
Application Number:
PCT/JP2016/086830
Publication Date:
June 22, 2017
Filing Date:
December 05, 2016
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/20; H01L21/265; H01L21/322; H01L27/146
Foreign References:
| JP2014099465A | 2014-05-29 | |||
| JP2014099454A | 2014-05-29 | |||
| JP2015023150A | 2015-02-02 | |||
| US20110084216A1 | 2011-04-14 | |||
| JPH10189473A | 1998-07-21 |
Attorney, Agent or Firm:
SUGIMURA, Kenji (JP)
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