Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2022/209816
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for producing a semiconductor substrate that has excellent pattern rectangularity; and a composition for forming a resist underlayer film. A method for producing a semiconductor substrate, the method comprising: a step in which a composition for forming a resist underlayer film is directly or indirectly applied to a substrate; a step in which a metal-containing resist film is formed on a resist underlayer film that is formed by the above-described step for applying a composition for forming a resist underlayer film; a step in which the metal-containing resist film is exposed to light; and a step in which a resist pattern is formed by volatilizing a part of the light-exposed metal-containing resist film.
Inventors:
MARUYAMA KEN (JP)
ABE TAKAYOSHI (JP)
SAKAI KAZUNORI (JP)
ABE TAKAYOSHI (JP)
SAKAI KAZUNORI (JP)
Application Number:
PCT/JP2022/011291
Publication Date:
October 06, 2022
Filing Date:
March 14, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; G03F7/20; G03F7/26
Domestic Patent References:
| WO2020241712A1 | 2020-12-03 | |||
| WO2021215240A1 | 2021-10-28 |
Foreign References:
| JP2015201622A | 2015-11-12 | |||
| JP2020056889A | 2020-04-09 | |||
| JPS62190211A | 1987-08-20 | |||
| JP2017116923A | 2017-06-29 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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