Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND CLEANING FLUID
Document Type and Number:
WIPO Patent Application WO/2023/136260
Kind Code:
A1
Abstract:
Provided are: a method for producing a semiconductor substrate using a cleaning fluid excellent in terms of the property of cleaning peripheral portions of substrates and waste-liquid stability; a method for forming a resist underlayer film; and the cleaning fluid. This method for producing a semiconductor substrate comprises: a step in which a composition for resist underlayer film formation is applied directly or indirectly to a substrate; a step in which peripheral portions of the substrate are cleaned with a cleaning fluid; and a step in which after the cleaning step, a resist pattern is formed directly on or indirectly over the resist underlayer film formed in the application step. The composition for resist underlayer film formation includes a metal compound and a solvent, and the cleaning fluid includes an organic acid.
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Inventors:
OZAKI YUKI (JP)
HIRABAYASHI HIROKI (JP)
HIRASAWA KENGO (JP)
SERIZAWA RYUICHI (JP)
HIRABAYASHI HIROKI (JP)
HIRASAWA KENGO (JP)
SERIZAWA RYUICHI (JP)
Application Number:
PCT/JP2023/000437
Publication Date:
July 20, 2023
Filing Date:
January 11, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; G03F7/16; G03F7/20; H01L21/304
Domestic Patent References:
| WO2016208103A1 | 2016-12-29 | |||
| WO2015053194A1 | 2015-04-16 | |||
| WO2013012068A1 | 2013-01-24 | |||
| WO2006040956A1 | 2006-04-20 |
Foreign References:
| JP2021532406A | 2021-11-25 | |||
| JP2020173361A | 2020-10-22 | |||
| JP2020173359A | 2020-10-22 | |||
| JP2019532489A | 2019-11-07 | |||
| JP2016532739A | 2016-10-20 | |||
| JP2020042217A | 2020-03-19 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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