Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2010/061619
Kind Code:
A1
Abstract:
Disclosed is a method wherein a semiconductor substrate is produced by heat-treating a base substrate that comprises a portion to be heat-treated, said portion being subjected to a heat treatment. The method for producing a semiconductor substrate comprises: a step wherein a portion to be heated is formed on the base substrate, said portion to be heated absorbing electromagnetic waves and generating heat, thereby selectively heating the portion to be heat-treated; a step wherein the base substrate is irradiated with electromagnetic waves; and a step wherein the lattice defect density in the portion to be heat-treated is decreased by the heat that is generated when the portion to be heated absorbs electromagnetic waves.
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Inventors:
TAKADA TOMOYUKI (JP)
HATA MASAHIKO (JP)
YAMADA HISASHI (JP)
HATA MASAHIKO (JP)
YAMADA HISASHI (JP)
Application Number:
PCT/JP2009/006411
Publication Date:
June 03, 2010
Filing Date:
November 26, 2009
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
TAKADA TOMOYUKI (JP)
HATA MASAHIKO (JP)
YAMADA HISASHI (JP)
TAKADA TOMOYUKI (JP)
HATA MASAHIKO (JP)
YAMADA HISASHI (JP)
International Classes:
H01L21/26; H01L21/20; H01L21/205; H01L21/265; H01L21/268
Foreign References:
| JPS63265424A | 1988-11-01 | |||
| JPS6439723A | 1989-02-10 | |||
| JPS63158832A | 1988-07-01 | |||
| JPH0817755A | 1996-01-19 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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