METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND RESIST UNDERLAYER FILM FORMING COMPOSITION

WIPO Patent Application WO/2023/199881

A1

The present invention provides: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition that is capable of forming a resist underlayer film having excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for producing a semiconductor substrate, the resist underlayer film forming composition contains a solvent and a polymer that has a repeating unit (1) which comprises an organic sulfonic acid anion moiety and an onium cation moiety.

KOMATSU HIROYUKI (JP)
DOBASHI MASATO (JP)
TATSUBO DAIKI (JP)
YOSHINAKA SHO (JP)
AKITA SHUNPEI (JP)
DEI SATOSHI (JP)
YONEDA EIJI (JP)
EHARA KENGO (JP)

PCT/JP2023/014498

October 19, 2023

April 10, 2023

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JSR CORP (JP)

G03F7/11

WO2011018928A1	2011-02-17
WO2022244682A1	2022-11-24

JP2011164345A	2011-08-25
JP2020056889A	2020-04-09
KR20130078758A	2013-07-10
JP2022183141A	2022-12-08

UNIUS PATENT ATTORNEYS OFFICE (JP)

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