Title:
METHOD FOR PRODUCING SILICON BLOCK AND SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2006/120736
Kind Code:
A1
Abstract:
The purpose is to provide a silicon block which can be processed into a thin silicon wafer having reduced breakage of a substrate during the manufacture of a solar battery. A method for producing a silicon block by cutting a silicon ingot using a silicon ingot cutting slurry containing abrasive grains and a basic substance, the basic substance being contained in a content of at least 3.5% by mass relative to the total mass of the liquid components of the slurry, the slurry containing an organic amine at a ratio of 0.5 to 5.0 inclusive by mass relative to the mass of the moisture in the liquid components of the slurry, and the slurry having a pH of 12 or higher and being used at a temperature within the range from 65 to 95&ring C.
Inventors:
MORIKAWA HIROAKI (JP)
KARAKIDA SHOICHI (JP)
KAWASAKI TAKAFUMI (JP)
KARAKIDA SHOICHI (JP)
KAWASAKI TAKAFUMI (JP)
Application Number:
PCT/JP2005/008603
Publication Date:
November 16, 2006
Filing Date:
May 11, 2005
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
MORIKAWA HIROAKI (JP)
KARAKIDA SHOICHI (JP)
KAWASAKI TAKAFUMI (JP)
MORIKAWA HIROAKI (JP)
KARAKIDA SHOICHI (JP)
KAWASAKI TAKAFUMI (JP)
International Classes:
C09K3/14; B28D5/04
Foreign References:
| JP2005088394A | 2005-04-07 | |||
| JP2001164284A | 2001-06-19 | |||
| JP2002176014A | 2002-06-21 | |||
| JP2002252188A | 2002-09-06 | |||
| JPH0857847A | 1996-03-05 | |||
| JPH1053789A | 1998-02-24 | |||
| JPH11349979A | 1999-12-21 |
Attorney, Agent or Firm:
Soga, Michiteru (8th floor Kokusai Building, 1-1, Marunouchi 3-chom, Chiyoda-ku Tokyo, JP)
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