Title:
METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/010405
Kind Code:
A1
Abstract:
A method for producing a silicon carbide semiconductor device has: a step for preparing a silicon carbide substrate; a step for forming an insulating film on one main surface of the silicon carbide substrate; a step for forming a contact hole in the insulating film and exposing the one main surface of the silicon carbide substrate at the floor surface of the contact hole; a step for forming an Si film on the floor surface of the contact hole; a step for forming an Ni film on the Si film; a step for executing a first heat treatment at a first temperature at which Ni and Si react with one another following the step for forming the Ni film; a step for removing an unreacted section of the Ni film which did not react with the Si film by wet etching after the first heat treatment; and a step for executing a second heat treatment at a second temperature which is higher than the first temperature following the step for removing the unreacted section.
Inventors:
TAMASO HIDETO (JP)
Application Number:
PCT/JP2020/027413
Publication Date:
January 21, 2021
Filing Date:
July 14, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/28; H01L21/336; H01L29/12; H01L29/41; H01L29/78
Foreign References:
| JP2013058587A | 2013-03-28 | |||
| JP2005276978A | 2005-10-06 | |||
| JP2018050008A | 2018-03-29 | |||
| JP2010103229A | 2010-05-06 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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