METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL - NIPPON STEEL & SUMITOMO METAL CORP

Title:

METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

Document Type and Number:

WIPO Patent Application WO/2016/152813

Kind Code:

A1

Abstract:

Provided is a production method by sublimation recrystallization with which SiC single crystals can be produced by more accurately detecting the heating state of feedstock inside a crucible and controlling growth conditions. To obtain a high-frequency current to be directed through an induction heating coil, this method comprises converter means for converting alternating current to direct current and inverter means for subjecting the direct current output from the converter means to high frequency conversion to obtain the high-frequency current. This method is characterized by understanding, in advance, the relationship between change over time of a DC equivalent resistance value (DCV/DCI) calculated from DC voltage (DCV) and DC current (DCI) converted by the converter means at the time of growth of a silicon carbide single crystal and a micropipe density formed in the grown silicon carbide single crystal, and adjusting at least one of DCV or DCI of the converter means on the basis of the relationship between the DC equivalent resistance value and the micropipe density understood in advance.

Inventors:

NAKABAYASHI MASASHI (JP)
KOJIMA KIYOSHI (JP)
DEAI HIROYUKI (JP)
SHIMOMURA KOTA (JP)
NAGAHATA YUKIO (JP)

Application Number:

PCT/JP2016/058854

Publication Date:

September 29, 2016

Filing Date:

March 18, 2016

Export Citation:

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Assignee:

NIPPON STEEL & SUMITOMO METAL CORP (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)

International Classes:

C30B29/36

Foreign References:

JP2008074663A	2008-04-03
JP2014108915A	2014-06-12
JP2009227525A	2009-10-08
JP2013126931A	2013-06-27

Other References: