Title:
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2020/031503
Kind Code:
A1
Abstract:
A seed crystal having a first main surface and a second main surface opposite the first main surface, a pedestal having a third main surface, and a fixing member are prepared. The second main surface has an outer peripheral portion that includes the entire outermost peripheral portion of the second main surface. Furthermore, the seed crystal is fixed to the pedestal by applying the fixing member to the outer peripheral portion in a state in which the first main surface is disposed so as to face the third main surface. A silicon carbide single crystal is grown on the second main surface. In the step for fixing the seed crystal to the pedestal, the fixing member contacts the outer peripheral portion in a section other than a region within ±10° with respect to an imaginary line running along the off direction of the seed crystal with the center of the second main surface as a starting point, as viewed from a direction perpendicular to the second main surface.
Inventors:
UETA SHUNSAKU (JP)
TAKAOKA HIROKI (JP)
TAKAOKA HIROKI (JP)
Application Number:
PCT/JP2019/023627
Publication Date:
February 13, 2020
Filing Date:
June 14, 2019
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B23/02
Domestic Patent References:
| WO2015182474A1 | 2015-12-03 | |||
| WO2016163157A1 | 2016-10-13 |
Foreign References:
| JP2003504297A | 2003-02-04 | |||
| JP2017154954A | 2017-09-07 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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