Title:
METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/176755
Kind Code:
A1
Abstract:
A method for producing a silicon carbide substrate comprises a step for preparing an ingot of a monocrystalline silicon carbide; a step for obtaining a silicon carbide substrate (3) by cutting the ingot; and a step for forming chamfers (3C, 3D, 3E) in the region comprising the outer peripheral surface of the silicon carbide substrate (3), wherein during the step for obtaining the silicon carbide substrate (3), an ingot is cut such that the primary face (3A) of the silicon carbide substrate (3) is at an angle of 10ºC or more with respect to the {0001} face.
Inventors:
OKITA KYOKO (JP)
FUJIWARA SHINSUKE (JP)
FUJIWARA SHINSUKE (JP)
Application Number:
PCT/JP2012/065595
Publication Date:
December 27, 2012
Filing Date:
June 19, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
OKITA KYOKO (JP)
FUJIWARA SHINSUKE (JP)
OKITA KYOKO (JP)
FUJIWARA SHINSUKE (JP)
International Classes:
H01L21/304
Domestic Patent References:
| WO2010119792A1 | 2010-10-21 | |||
| WO2001048802A1 | 2001-07-05 |
Foreign References:
| JPS58103144U | 1983-07-13 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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