Title:
METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/152292
Kind Code:
A1
Abstract:
Provided is a method for producing a silicon nitride substrate, said method comprising: a raw material powder preparation step of preparing a raw material powder containing a silicon powder, a rare earth element compound and a magnesium compound, wherein, when the amount of silicon in the raw material powder is expressed in terms of a silicon nitride content, the raw material powder contains the rare earth element compound in an amount of 1 to 7 mol% inclusive in terms of an oxide content and also contains the magnesium compound in an amount of 8 to 15 mol% inclusive in terms of an oxide content; a sheet molding step of molding the raw material powder into a sheet-like shape to form a sheet-like article; a nitriding step of heating the sheet-like article in a nitrogen atmosphere at 1200 to 1500°C inclusive to nitride silicon contained in the sheet-like article; and a sintering step of sintering the sheet-like article, which has been undergone the nitriding step, under a nitrogen atmosphere.
Inventors:
KUSANO DAI (JP)
TANABE GEN (JP)
HIRAO KIYOSHI (JP)
HYUGA HIDEKI (JP)
ZHOU YOU (JP)
TANABE GEN (JP)
HIRAO KIYOSHI (JP)
HYUGA HIDEKI (JP)
ZHOU YOU (JP)
Application Number:
PCT/JP2015/060252
Publication Date:
October 08, 2015
Filing Date:
March 31, 2015
Export Citation:
Assignee:
JAPAN FINE CERAMICS CO LTD (JP)
International Classes:
C04B35/584; C04B35/591; C04B35/64
Foreign References:
| JP2000128643A | 2000-05-09 | |||
| JPH11236270A | 1999-08-31 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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