METHOD FOR PRODUCING SILICON SUBSTRATE FOR QUANTUM COMPUTERS, SILICON SUBSTRATE FOR QUANTUM COMPUTERS, AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2024/034433

A1

The present invention provides a method for producing a silicon substrate for quantum computers, the method comprising: a step for forming an Si epitaxial layer on a silicon substrate by performing epitaxial growth using, as a silicon-based material gas, an Si source gas in which the total content of 28Si and 30Si relative to the all silicon contained in the silicon-based material gas is 99.9% or more; a step for forming a δ-doped layer of oxygen (O) by oxidizing the surface of the Si epitaxial layer; and a step for forming an Si epitaxial layer on the δ-doped layer by performing epitaxial growth with use of an Si source gas in which the total content of 28Si and 30Si relative to the all silicon contained in the silicon-based material gas is 99.9% or more. Consequently, the present invention provides: a silicon substrate for quantum computers, the silicon substrate being capable of suppressing the influence of 29Si, thereby being capable of suppressing the influence of nuclear spin; and a method for producing this silicon substrate for quantum computers.

OHTSUKI TSUYOSHI (JP)
SUZUKI ATSUSHI (JP)
MATSUBARA TOSHIKI (JP)
ABE TATSUO (JP)
SUZUKI KATSUYOSHI (JP)

PCT/JP2023/027757

February 15, 2024

July 28, 2023

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SHINETSU HANDOTAI KK (JP)

H01L21/205; H01L21/02; H01L21/20; H01L27/12; H01L29/06

JP2022015868A	2022-01-21
JP2004039735A	2004-02-05
JP2008277477A	2008-11-13
JPH0846222A	1996-02-16
JP2006173263A	2006-06-29
JP2020010035A	2020-01-16
JP2017126747A	2017-07-20
US20220005927A1	2022-01-06

YOSHIMIYA Mikio et al. (JP)

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