Title:
METHOD FOR PRODUCING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2018/074063
Kind Code:
A1
Abstract:
The present invention is a method for producing a silicon wafer, comprising a spin etching step of rotating a silicon wafer while supplying an acid etching solution onto a front surface or a rear surface of the silicon wafer through a supply nozzle to perform acid etching while extending the acid etching solution supply area to the whole area of the front surface or the rear surface of the silicon wafer, said method being characterized in that, in the spin etching step, the number of spin rotations of the silicon wafer is set to 1000 rpm or less and an acid etching solution having a viscosity of 6.0 mPa·s or less is used. A silicon wafer production method is provided, whereby it becomes possible to reduce etching unevenness in areas in the vicinity of laser mark dots.
Inventors:
OONISHI KUNIAKI (JP)
Application Number:
PCT/JP2017/030670
Publication Date:
April 26, 2018
Filing Date:
August 28, 2017
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/306; B23K26/00; H01L21/304
Foreign References:
| JP2008198906A | 2008-08-28 | |||
| JP2006120819A | 2006-05-11 | |||
| JPH09306897A | 1997-11-28 | |||
| JP2004503081A | 2004-01-29 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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