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Patent Searching and Data


Title:
METHOD FOR PRODUCING SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2019/163648
Kind Code:
A1
Abstract:
This method involves: a step for forming a first semiconductor layer (13p) of a first conductive type on one principal surface of a crystal substrate (11); a step for forming a lift-off layer (LF) which contains a silicon thin-film material on the first semiconductor layer; a step for selectively removing the lift-off layer and the first semiconductor layer; a step for forming a second semiconductor layer (13n) of a second conductive type on the one principal surface containing the lift-off layer and the first semiconductor layer; and a step for removing the second semiconductor layer which covers the lift-off layer by removing the lift-off layer using an etching solution. The step for selectively removing the lift-off layer and the first semiconductor layer includes a step for removing the first semiconductor layer, by plasma etching by introducing a gas having hydrogen as a principal component thereof, after removing the lift-off layer.

Inventors:
MISHIMA Ryota (5-1-1 Torikainishi, Settsu-sh, Osaka 72, 〒5660072, JP)
ADACHI Daisuke (5-1-1 Torikainishi, Settsu-sh, Osaka 72, 〒5660072, JP)
NAKANO Kunihiro (5-1-1 Torikainishi, Settsu-sh, Osaka 72, 〒5660072, JP)
KONISHI Katsunori (5-1-1 Torikainishi, Settsu-sh, Osaka 72, 〒5660072, JP)
KUCHIYAMA Takashi (5-1-1 Torikainishi, Settsu-sh, Osaka 72, 〒5660072, JP)
YAMAMOTO Kenji (5-1-1 Torikainishi, Settsu-sh, Osaka 72, 〒5660072, JP)
Application Number:
JP2019/005408
Publication Date:
August 29, 2019
Filing Date:
February 14, 2019
Export Citation:
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Assignee:
KANEKA CORPORATION (2-3-18, Nakanoshima Kita-ku, Osaka-sh, Osaka 88, 〒5308288, JP)
International Classes:
H01L31/18; H01L31/0747
Attorney, Agent or Firm:
MAEDA & PARTNERS (Shin-Daibiru Bldg. 23F, 2-1 Dojimahama 1-chome, Kita-ku, Osaka-sh, Osaka 04, 〒5300004, JP)
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