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Patent Searching and Data


Title:
METHOD FOR PRODUCING SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2019/163648
Kind Code:
A1
Abstract:
This method involves: a step for forming a first semiconductor layer (13p) of a first conductive type on one principal surface of a crystal substrate (11); a step for forming a lift-off layer (LF) which contains a silicon thin-film material on the first semiconductor layer; a step for selectively removing the lift-off layer and the first semiconductor layer; a step for forming a second semiconductor layer (13n) of a second conductive type on the one principal surface containing the lift-off layer and the first semiconductor layer; and a step for removing the second semiconductor layer which covers the lift-off layer by removing the lift-off layer using an etching solution. The step for selectively removing the lift-off layer and the first semiconductor layer includes a step for removing the first semiconductor layer, by plasma etching by introducing a gas having hydrogen as a principal component thereof, after removing the lift-off layer.

Inventors:
MISHIMA RYOTA (JP)
ADACHI DAISUKE (JP)
NAKANO KUNIHIRO (JP)
KONISHI KATSUNORI (JP)
KUCHIYAMA TAKASHI (JP)
YAMAMOTO KENJI (JP)
Application Number:
JP2019/005408
Publication Date:
August 29, 2019
Filing Date:
February 14, 2019
Export Citation:
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Assignee:
KANEKA CORP (JP)
International Classes:
H01L31/18; H01L31/0747
Domestic Patent References:
WO2015060432A12015-04-30
WO2017217219A12017-12-21
Foreign References:
JPH03171725A1991-07-25
US5286340A1994-02-15
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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