Title:
METHOD FOR PRODUCING SPUTTERING TARGET MATERIAL
Document Type and Number:
WIPO Patent Application WO/2021/141042
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for producing a target material which is reduced in the generation of particles during sputtering. The present invention provides a method for producing a sputtering target material which is formed from an alloy M, said method comprising a sintering step wherein a mixed powder that is obtained by mixing a first powder and a second powder is sintered; the material of the first powder is an alloy M1 that has a B content ratio of from 40 at.% to 60 at.%; the material of the second powder is an alloy M2 that has a B content ratio of from 20 at.% to 35 at.%; the B content ratio of the mixed powder is from 33 at.% to 50 at.%; a metal structure containing a (CoFe)2B phase and a (CoFe)B phase is formed in the sintering step; and the boundary length per unit area Y (1/μm) as determined by measuring the boundary length between the (CoFe)2B phase and the (CoFe)B phase with use of a scanning electron microscope and the B content ratio X (at.%) of the alloy M satisfy the formula below. Y < -0.0015 × (X – 42.5)2 + 0.15
Inventors:
MATSUBARA NORIAKI (JP)
Application Number:
PCT/JP2021/000186
Publication Date:
July 15, 2021
Filing Date:
January 06, 2021
Export Citation:
Assignee:
SANYO SPECIAL STEEL CO LTD (JP)
International Classes:
C23C14/34; B22F1/00; C22C1/04; C22C19/07; C22C33/02; C22C38/00
Domestic Patent References:
| WO2020175424A1 | 2020-09-03 | |||
| WO2015080009A1 | 2015-06-04 | |||
| WO2016140113A1 | 2016-09-09 |
Foreign References:
| JP2018526525A | 2018-09-13 | |||
| JP2008045173A | 2008-02-28 | |||
| JP2017057490A | 2017-03-23 | |||
| JP2004346423A | 2004-12-09 | |||
| JP2017057477A | 2017-03-23 |
Other References:
See also references of EP 4089200A4
Attorney, Agent or Firm:
NAKAMURA Yukitaka et al. (JP)
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