Title:
METHOD FOR PRODUCING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2016/103114
Kind Code:
A1
Abstract:
Provided is a sputtering target containing an oxide with a low concentration of impurities. A method for producing the sputtering target comprises: a first step in which a mixture comprising indium, zinc, an element M (where M is aluminum, gallium, yttrium, or tin), and oxygen, is prepared; a second step in which the mixture is heated from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of 90 vol% to 100 vol%, inclusive; and a third step in which the temperature of the mixture is reduced from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of 10 vol% to 100 vol%, inclusive.
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Inventors:
YAMAZAKI SHUNPEI (JP)
YAMADA YOSHINORI
OOTA MASASHI
YAMADA YOSHINORI
OOTA MASASHI
Application Number:
PCT/IB2015/059650
Publication Date:
June 30, 2016
Filing Date:
December 16, 2015
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
C04B35/00; C23C14/34; C04B35/453; H01L21/336; H01L21/363; H01L29/786
Foreign References:
| JP2014051735A | 2014-03-20 | |||
| JP2013144841A | 2013-07-25 | |||
| JP2012197219A | 2012-10-18 |
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