METHOD FOR PRODUCING STRUCTURE, APPARATUS FOR PRODUCING STRUCTURE, AND INTERMEDIATE STRUCTURE

WIPO Patent Application WO/2020/217769

A1

This method for producing a structure comprises: a step for preparing an object to be etched, at least the surface of which is formed from a group III nitride; and a step for etching the group III nitride by irradiating the surface of the object to be etched with light through a peroxodisulfate ion-containing etching solution while the object to be etched is immersed in the etching solution, thereby generating sulfate ion radicals from the peroxodisulfate ions and generating holes in the group III nitride. At the step for etching the group III nitride, etching is carried out with the etching solution maintained in an acidic state during the period in which the group III nitride is etched as a result of making the etching solution acidic at the beginning of etching the group III nitride, and with a resist mask formed on the surface.

JP3152177	FORMATION OF MINUTE PATTERN, MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD
JP2022073306	DEVICE AND METHOD FOR SUBSTRATE PROCESSING
JPS5160166	HANDOTAISOCHINO SEIZOHOHO

HORIKIRI FUMIMASA (JP)
FUKUHARA NOBORU (JP)
SATO TAKETOMO (JP)
TOGUCHI MASACHIKA (JP)

PCT/JP2020/011152

October 29, 2020

March 13, 2020

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SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)

H01L21/306; H01L21/308

WO2007105281A1

2007-09-20

JP2008527717A	2008-07-24
JPH07161683A	1995-06-23
JP2017195383A	2017-10-26
JP2012178424A	2012-09-13
JP2015532009A	2015-11-05

FUKUOKA Masahiro et al. (JP)

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