Title:
METHOD FOR PRODUCING A STRUCTURE SUCH AS AN INSULATOR SEMICONDUCTOR AND IN PARTICULAR SiCOI
Document Type and Number:
WIPO Patent Application WO1999039371
Kind Code:
A3
Abstract:
The invention concerns a method for producing a structure comprising a support substrate (20) and a layer of semiconductor material (12) on one surface of the support substrate, the method consisting in: a) forming a semiconductor layer (12) on a surface of a first substrate (10); b) forming a cleavage zone in the first substrate, delimiting a surface layer (18); c) bringing the first substrate (10), with the semiconductor material (12), on the support substrate (20); d) supplying power to cleave the first substrate along the cleavage line (16); e) eliminating said surface layer (16) to expose the semiconductor material layer (12).
Inventors:
DI CIOCCIO LEA (FR)
Application Number:
PCT/FR1999/000155
Publication Date:
October 07, 1999
Filing Date:
January 27, 1999
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
CIOCCIO LEA DI (FR)
CIOCCIO LEA DI (FR)
International Classes:
H01L21/02; H01L21/04; H01L21/76; H01L21/762; H01L21/84; H01L27/12; (IPC1-7): H01L21/20; H01L21/76
Foreign References:
| US5563428A | 1996-10-08 |
Other References:
TONG Q -Y ET AL: "A FEASIBILITY STUDY OF SIC ON OXIDE BY WAFER BONDING AND LAYER TRANSFERRING", PROCEEDINGS OF THE INTERNATIONAL SOI CONFERENCE, PALM SPRINGS, OCT. 5 - 7, 1993, no. CONF. 19, 5 October 1993 (1993-10-05), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 60/61, XP000470402
DI CIOCCIO L ET AL: "Silicon carbide on insulator formation by the Smart-Cut(R) process", MATERIALS SCIENCE AND ENGINEERING B, vol. 46, no. 1-3, April 1997 (1997-04-01), pages 349-356, XP004085343
DI CIOCCIO L ET AL: "Silicon carbide on insulator formation by the Smart-Cut(R) process", MATERIALS SCIENCE AND ENGINEERING B, vol. 46, no. 1-3, April 1997 (1997-04-01), pages 349-356, XP004085343
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