Title:
METHOD FOR PRODUCING THIN FILM TRANSISTOR DEVICE, THIN FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/153365
Kind Code:
A1
Abstract:
A method for producing a thin film transistor device, in which a laser of a wavelength in the visible light region is used to form a crystalline silicon film of stable crystallinity, the method including: a step (S11) for forming a plurality of gate electrodes on a substrate; a step for forming a silicon nitride layer over the plurality of gate electrodes; a step (S12) for stacking a silicon oxide layer over the silicon nitride layer; a step (S13) for forming an amorphous silicon layer over the silicon oxide layer; a step (S14) for using a predetermined laser beam to crystallize the amorphous silicon layer and produce a crystalline silicon layer; and a step (S18) for forming source electrodes and drain electrodes in regions on the crystalline silicon layer that correspond to each of the plurality of gate electrodes. The thickness of the silicon oxide layer, the thickness of the silicon nitride layer, and the thickness of the amorphous silicon layer are set so as to fulfill a predetermined conditional expression.
Inventors:
SUGAWARA YUTA
Application Number:
PCT/JP2011/002589
Publication Date:
November 15, 2012
Filing Date:
May 10, 2011
Export Citation:
Assignee:
PANASONIC CORP (JP)
SUGAWARA YUTA
SUGAWARA YUTA
International Classes:
H01L21/336; H01L21/20; H01L29/786
Foreign References:
| JP2007220918A | 2007-08-30 | |||
| JPH0883766A | 1996-03-26 | |||
| JP2010287645A | 2010-12-24 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
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Claims: