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Patent Searching and Data


Title:
METHOD FOR PRODUCING X-RAY IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2017/073174
Kind Code:
A1
Abstract:
Provided is a method for producing an X-ray image sensor, with which incident photon-to-current efficiency is improved through polycrystalline silicon conversion based on annealing treatment, thereby enabling diagnosis of a patient with a mild dose of X-rays, and in which it is also possible to use a resin substrate. The method includes: a TFT circuit forming step for forming a TFT circuit on the upper layer of a substrate; a photodiode forming step for forming a photodiode, which converts fluorescence into electric signals, on the upper layer of the TFT circuit; an annealing treatment step for performing annealing treatment, for polycrystallization, on a silicon layer that constitutes the TFT circuit or the photodiode; and a fluorescent material-layer forming step for forming a fluorescent material layer, which converts X-rays into fluorescence, on the upper layer of the photodiode.

Inventors:
TASAKA TOMOKI (JP)
FUJIMORI YUYA (JP)
MIZUMURA MICHINOBU (JP)
KAJIYAMA KOICHI (JP)
Application Number:
PCT/JP2016/076273
Publication Date:
May 04, 2017
Filing Date:
September 07, 2016
Export Citation:
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Assignee:
V TECH CO LTD (JP)
International Classes:
H01L27/146; G01T1/20; H01L27/144; H01L31/0232; H01L31/10
Foreign References:
JP2012247327A2012-12-13
JP2011066070A2011-03-31
JP2010153834A2010-07-08
JPH11307756A1999-11-05
JP2012256812A2012-12-27
Attorney, Agent or Firm:
SHIRASAKA, Hajime et al. (JP)
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