Title:
METHOD FOR PRODUCING ZINC OXIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2013/136948
Kind Code:
A1
Abstract:
Provided is a method for stably producing, with high productivity and reproducibility, a zinc oxide single crystal in which a large amount of dopant is dissolved without using a toxic substance. This method for producing a zinc oxide single crystal comprises: a step of preparing a base powder which is mainly composed of zinc oxide, contains, in a total of 0.01 to 1 at%, at least one type of a dopant element selected from the group consisting of B, Al, Ga, In, C, F, Cl, Br, I, H, Li, Na, K, N, P, As, Cu and Ag, and substantially does not include a crystal phase other than zinc oxide; and a step of injecting the base powder to form a film which is composed mainly of zinc oxide on a seed substrate that contains a zinc oxide single crystal, and crystallizing the formed film in the solid phase state to obtain a zinc oxide single crystal in which the dopant element is dissolved.
Inventors:
YOSHIKAWA JUN (JP)
IMAI KATSUHIRO (JP)
IMAI KATSUHIRO (JP)
Application Number:
PCT/JP2013/054594
Publication Date:
September 19, 2013
Filing Date:
February 22, 2013
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/16; C01G9/02
Foreign References:
| JP2006188046A | 2006-07-20 | |||
| JP2011073965A | 2011-04-14 |
Attorney, Agent or Firm:
TAKAMURA Masaharu et al. (JP)
Masaharu Takamura (JP)
Masaharu Takamura (JP)
Download PDF: