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Patent Searching and Data


Title:
METHOD OF PROGRAMMING IN FLASH MEMORY DEVICES
Document Type and Number:
WIPO Patent Application WO/2021/035562
Kind Code:
A1
Abstract:
A method of programming a flash memory device includes selecting a first wordline of a plurality of wordlines to select a selected wordline, the selected wordline corresponding to a target memory cell and performing a programming loop. The programming loop includes applying a program voltage to the selected wordline and performing a verification to the target memory cell. The verification includes applying a pre-pulse voltage to the selected wordline, applying a plurality of pass voltages to unselected wordlines of the plurality of wordlines, after applying the pre-pulse voltage, applying a series of incremental verifying voltages to the selected wordline, and after applying the pre-pulse voltage, applying a floating voltage to a second wordline of the plurality of wordlines. The second wordline being adjacent to the selected wordline is programmed after the selected wordline.

Inventors:
WANG YU (CN)
LI SHUANG (CN)
RUAN QING (CN)
HOU CHUNYUAN (CN)
TANG QIANG (CN)
Application Number:
PCT/CN2019/102969
Publication Date:
March 04, 2021
Filing Date:
August 28, 2019
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/08; G11C16/24
Foreign References:
CN108986861A2018-12-11
CN109658964A2019-04-19
US20090219765A12009-09-03
US20090285026A12009-11-19
US20090282184A12009-11-12
US20150085576A12015-03-26
Other References:
See also references of EP 3877978A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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