Title:
METHOD FOR PROGRAMMING MEMORY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2020/168478
Kind Code:
A1
Abstract:
A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.
Inventors:
LI HAIBO (CN)
MUI MAN LUNG (CN)
MUI MAN LUNG (CN)
Application Number:
PCT/CN2019/075549
Publication Date:
August 27, 2020
Filing Date:
February 20, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/10
Foreign References:
| US20140219027A1 | 2014-08-07 | |||
| US20110194346A1 | 2011-08-11 | |||
| CN102754165A | 2012-10-24 | |||
| CN107689245A | 2018-02-13 | |||
| CN107633865A | 2018-01-26 | |||
| US20160118126A1 | 2016-04-28 | |||
| US20120170373A1 | 2012-07-05 | |||
| US20100246270A1 | 2010-09-30 |
Other References:
See also references of EP 3853855A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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