Title:
METHOD OF PROGRAMMING MULTILEVEL CELL NAND FLASH MEMORY DEVICE AND MLC NAND FLASH MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/232658
Kind Code:
A1
Abstract:
A method of programming a NAND flash memory device includes: a programming voltage generation circuit applying an initial programming voltage pulse to a predetermined page of NAND flash memory; a controller verifying a plurality of verification levels of the predetermined page, the plurality of verification levels being less than a first-state verification voltage of verifying a lowest program state of the predetermined page; the controller determining a magnitude of a subsequent programming voltage pulse upon one of the plurality of verification levels of the predetermined page passing a verification; and the programming voltage generation circuit applying the subsequent programming voltage pulse to the predetermined page.
Inventors:
WAN WEI JUN (CN)
Application Number:
PCT/CN2019/087903
Publication Date:
November 26, 2020
Filing Date:
May 22, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/12; G11C16/34
Foreign References:
| US20080106944A1 | 2008-05-08 | |||
| CN104916323A | 2015-09-16 | |||
| CN107799147A | 2018-03-13 | |||
| US20110122705A1 | 2011-05-26 | |||
| US20120236654A1 | 2012-09-20 | |||
| US20100182839A1 | 2010-07-22 |
Other References:
See also references of EP 3909050A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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