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Title:
METHOD FOR PURIFYING DODECACARBONYL TRIRUTHENIUM
Document Type and Number:
WIPO Patent Application WO/2015/186679
Kind Code:
A1
Abstract:
The objective of the present invention is to provide a purification method for obtaining dodecacarbonyl triruthenium (DCR) for use as a chemical vapor deposition source, such that when a ruthenium thin film is formed from the DCR, there are no impurities mixed in the thin film. The present invention relates to a method for purifying, by a recrystallization method, an organic ruthenium compound including DCR and for use as a chemical vapor deposition source with a dissolved oxygen concentration in a solvent being 0.2 mg/L or less at least in the dissolving step. According to the present invention, trace impurities can be separated from the DCR, and when a ruthenium thin film is formed using the DCR obtained thereby, the formed film is less susceptible to impurities being mixed inside. Further, this purification method can be applied for recovering and purifying the DCR after using the DCR to form the ruthenium thin film.

Inventors:
NAKAGAWA HIROFUMI (JP)
ISHIZAKA TASUKU (JP)
ISHIDA HIROFUMI (JP)
KUMAKURA AKIKO (JP)
Application Number:
PCT/JP2015/065832
Publication Date:
December 10, 2015
Filing Date:
June 02, 2015
Export Citation:
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Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C01G55/00; C07F15/00; C23C16/16
Domestic Patent References:
WO2013018577A12013-02-07
Foreign References:
JP2008244298A2008-10-09
Other References:
M. L. GREEN: "Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films", J. ELECTROCHEM. SOC., vol. 132, no. i ssue 11, 1985, pages 2677 - 2685, XP002924986
See also references of EP 3153473A4
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)
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