Title:
METHOD OF QUANTITATIVELY CHARACTERIZING ADULTERANTS OF SILANES AND COATED SUSCEPTOR
Document Type and Number:
WIPO Patent Application WO/2013/138016
Kind Code:
A3
Abstract:
Described herein is a method of indirectly quantitatively characterizing at least one adulterant of a silane. The method comprises etching a substrate in situ to give a very clean substrate surface, epitaxy of silicon formed from the silane on the surface, and a sensitive analysis of the resulting silicon film. Also described is a coated susceptor.
Inventors:
DEBRAH EBENEZER (US)
LOBODA MARK (US)
TELGENHOFF MICHAEL (US)
YANG FENGLIN (US)
LOBODA MARK (US)
TELGENHOFF MICHAEL (US)
YANG FENGLIN (US)
Application Number:
PCT/US2013/026336
Publication Date:
December 05, 2013
Filing Date:
February 15, 2013
Export Citation:
Assignee:
DOW CORNING (US)
International Classes:
H01L21/02; G01N1/32; G01N33/00
Domestic Patent References:
| WO2011103941A1 | 2011-09-01 |
Foreign References:
| US20120003821A1 | 2012-01-05 |
Other References:
YASUO KUNII ET AL: "Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 26, 25 April 1987 (1987-04-25), pages 1008 - 1013, XP055068753, ISSN: 0021-4922
TAYLOR ET AL: "Purification techniques and analytical methods for gaseous and metallic impurities in high-purity silane", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 89, no. 1, 1 June 1988 (1988-06-01), pages 28 - 38, XP024429734, ISSN: 0022-0248, [retrieved on 19880601], DOI: 10.1016/0022-0248(88)90068-1
CHIANG Y S: "SILICON EPITAXIAL GROWTH VIA DICHLOROSILANE IN A BARREL REACTOR", RCA REVIEW, RCA CORPORATION, US, vol. 38, no. 4, 1 December 1977 (1977-12-01), pages 500 - 511, XP008163052, ISSN: 0033-6831
ASADA: "end point detection of dry cleaning on LPCVD", 1 January 2006 (2006-01-01), XP055068854, Retrieved from the Internet [retrieved on 20130701]
TAYLOR ET AL: "Purification techniques and analytical methods for gaseous and metallic impurities in high-purity silane", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 89, no. 1, 1 June 1988 (1988-06-01), pages 28 - 38, XP024429734, ISSN: 0022-0248, [retrieved on 19880601], DOI: 10.1016/0022-0248(88)90068-1
CHIANG Y S: "SILICON EPITAXIAL GROWTH VIA DICHLOROSILANE IN A BARREL REACTOR", RCA REVIEW, RCA CORPORATION, US, vol. 38, no. 4, 1 December 1977 (1977-12-01), pages 500 - 511, XP008163052, ISSN: 0033-6831
ASADA: "end point detection of dry cleaning on LPCVD", 1 January 2006 (2006-01-01), XP055068854, Retrieved from the Internet
Attorney, Agent or Firm:
PURCHASE, Claude, F. (Patent Department - Mail CO12322200 West Salzburg Roa, Midland MI, US)
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