Title:
METHOD FOR READING CROSS POINT-TYPE MEMORY ARRAY INCLUDING TWO-TERMINAL SWITCHING MATERIAL
Document Type and Number:
WIPO Patent Application WO/2020/204628
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a current reading method for analog information processing in a memory array for a synaptic device. To this end, the present invention provides a method for reading a memory array including a two-terminal switching material, the method comprising the steps of: (a) applying a voltage to the memory array to select one or more cells; and (b) simultaneously measuring currents of the one or more selected cells to obtain the sum of the currents, wherein the voltage applied to the one or more selected cells in step (a) is greater than a voltage applied to one or more non-selected cells while being in a range where all the one or more selected cells are not turned on.
Inventors:
KIM JUN-SUNG (US)
Application Number:
PCT/KR2020/004517
Publication Date:
October 08, 2020
Filing Date:
April 02, 2020
Export Citation:
Assignee:
KIM JUN SUNG (US)
International Classes:
G11C13/00; G06N3/04; G06N3/063; G11C11/54
Foreign References:
| KR101875835B1 | 2018-08-02 | |||
| KR20160074238A | 2016-06-28 | |||
| KR20080112976A | 2008-12-26 | |||
| JP2005116162A | 2005-04-28 | |||
| KR20180129298A | 2018-12-05 |
Other References:
See also references of EP 3951783A4
Attorney, Agent or Firm:
IAM PATENT FIRM (KR)
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