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Title:
METHOD FOR READING DATA, AND FLASH MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/119900
Kind Code:
A1
Abstract:
A method for reading data, and a flash memory device (1000). When the read data has an error, the flash memory device (1000) preferably increases reference voltages between adjacent states having a high error rate, thereby being able to reduce the number of reference voltages on the basis of ensuring the probability of reading correct data, so that the number of times of comparing the voltage during data reading can be reduced, the time for reading correct data can be shortened, and further the execution time of the reading operation can be shortened.

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Inventors:
CHANG LE (CN)
SHI LIANG (CN)
LI QIAO (CN)
WANG YUANGANG (CN)
Application Number:
PCT/CN2016/113085
Publication Date:
July 05, 2018
Filing Date:
December 29, 2016
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G06F11/00
Foreign References:
CN103186352A2013-07-03
CN104575618A2015-04-29
CN103380416A2013-10-30
CN106169308A2016-11-30
CN103384902A2013-11-06
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