Title:
METHOD FOR REALIZING SINGLE-EXCITON GAIN IN SEMICONDUCTOR NANOCRYSTALS BY USING CIRCULARLY POLARIZED LASERS
Document Type and Number:
WIPO Patent Application WO/2023/115381
Kind Code:
A1
Abstract:
A method for realizing single-exciton gain in semiconductor nanocrystals by using circularly polarized lasers, relating to the technical field of lasers. The method comprises the following steps: preparing a thin film sample from semiconductor nanocrystals, sample molecules being tightly and densely packed and fixed in position (S1); measuring the absorbance of the thin film sample by using an ultraviolet-visible absorption spectrometer (S2); generating a circularly polarized light beam by using a femtosecond laser and a circular polarizer, and focusing the circularly polarized light beam onto the thin film sample as pump light (S3); changing the intensity of the pump light, and measuring, by using another circularly polarized light beam as probe light, the intensity of a ground state bleaching signal of the thin film sample (S4); and determining whether the intensity of the ground state bleaching signal is equal to the absorbance, and if so, determining that the threshold light intensity of the pump light is a single-exciton gain threshold (S5).
Inventors:
FAN FENGJIA (CN)
TANG BEIBEI (CN)
LI GUIHAI (CN)
DU JIANGFENG (CN)
TANG BEIBEI (CN)
LI GUIHAI (CN)
DU JIANGFENG (CN)
Application Number:
PCT/CN2021/140414
Publication Date:
June 29, 2023
Filing Date:
December 22, 2021
Export Citation:
Assignee:
UNIV SCIENCE & TECHNOLOGY CHINA (CN)
International Classes:
G01N21/63; H01S5/04
Foreign References:
| US20090116524A1 | 2009-05-07 | |||
| CN110896129A | 2020-03-20 | |||
| CN103344574A | 2013-10-09 | |||
| CN103837239A | 2014-06-04 | |||
| EP2887044A1 | 2015-06-24 | |||
| US20210167566A1 | 2021-06-03 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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