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Title:
METHOD FOR RECOVERING SILICON AND METHOD FOR PRODUCING SILICON
Document Type and Number:
WIPO Patent Application WO/2011/111767
Kind Code:
A1
Abstract:
Disclosed is a method capable of recovering or producing silicon with abrasive grains of silicon carbide and cutting scraps that contain silicon as starting materials without separating these starting materials. More specifically disclosed is a method for recovering or producing silicon from cutting scraps that contain silicon carbide produced during the cutting or grinding of silicon ingots or silicon wafers, and the method for recovering or producing silicon includes a process for producing silicon by heating the cutting scrap that contains silicon carbide along with a silica starting material.

Inventors:
YAMAHARA KEIJI
KATAYAMA TOSHIAKI
HASHIGUCHI TADASHI
SHIRAHAMA TOSHIKI
SAWAI TAKESHI
Application Number:
PCT/JP2011/055600
Publication Date:
September 15, 2011
Filing Date:
March 10, 2011
Export Citation:
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Assignee:
MITSUBISHI CHEM CORP (JP)
YAMAHARA KEIJI
KATAYAMA TOSHIAKI
HASHIGUCHI TADASHI
SHIRAHAMA TOSHIKI
SAWAI TAKESHI
International Classes:
C01B33/023; C01B33/025
Foreign References:
JPS61117111A1986-06-04
JPS62260711A1987-11-13
JP2001278612A2001-10-10
JP2001039708A2001-02-13
JP2005313030A2005-11-10
JP2007302513A2007-11-22
JP2010054741A2010-03-11
Attorney, Agent or Firm:
HAMADA Yuriko et al. (JP)
Yuriko Hamada (JP)
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