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Title:
METHOD FOR REGULATING THE MAGNETIZATION OF THE BIAS LAYER OF A MAGNETORESISTIVE SENSOR ELEMENT, SENSOR ELEMENT OR SENSOR ELEMENT SYSTEM PROCESSED ACCORDING TO SAID METHOD AND SENSOR ELEMENT AND SENSOR SUBSTRATE SUITABLE FOR THE IMPLEMENTATION OF SAID METHOD
Document Type and Number:
WIPO Patent Application WO2000002006
Kind Code:
A3
Abstract:
The invention relates to a method for regulating the magnetization of at least one bias layer of a magnetoresistive sensor element, whereby the bias layer is part of an AAF (artificial antiferromagnetic) system consisting of at least one bias layer, at least one flux conducting layer and at least one connecting layer that is arranged between said layers and connects them antiferromagnetically. The inventive method comprises the following steps: a) the sensor element is heated to above a predetermined temperature (Ts) or cooled to below a predetermined temperature (Ts), b) a magnetic regulating field (Hein) is applied during and/or after heating or cooling, c) the regulating field (Hein) is no longer applied after a predetermined time period, and d) the temperature is brought back to the initial temperature.

Inventors:
VAN DEN BERG HUGO (DE)
MATTHEIS ROLAND (DE)
Application Number:
PCT/DE1999/002017
Publication Date:
August 31, 2000
Filing Date:
July 01, 1999
Export Citation:
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Assignee:
SIEMENS AG (DE)
BERG HUGO VAN DEN (DE)
MATTHEIS ROLAND (DE)
International Classes:
G01B7/30; H01F13/00; G01R33/09; H01L43/12; (IPC1-7): G01R33/09
Foreign References:
US5701222A1997-12-23
US5677625A1997-10-14
Other References:
BERG VAN DEN H A M ET AL: "GMR SENSOR SCHEME WITH ARTIFICIAL ANTIFERROMAGNETIC SUBSYSTEM", IEEE TRANSACTIONS ON MAGNETICS,US,IEEE INC. NEW YORK, vol. 32, no. 5, 1 September 1996 (1996-09-01), pages 4624 - 4626, XP000634087, ISSN: 0018-9464
BERG VAN DEN H A M ET AL: "GMR ANGLE DETECTOR WITH AN ARTIFICIAL ANTIFERROMAGNETIC SUBSYSTEM (AAF)", JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,NL,ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, vol. 165, no. 1/03, 1 January 1997 (1997-01-01), pages 524 - 528, XP000641835, ISSN: 0304-8853
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