Title:
METHOD FOR REGULATING VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR STORAGE CELL, METHOD FOR REGULATING VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR STORAGE DEVICE, CHARGE PUMP, AND METHOD FOR REGULATING VOLTAGE OF CHARGE PUMP
Document Type and Number:
WIPO Patent Application WO/2011/148898
Kind Code:
A1
Abstract:
Voltages are applied to the source-voltage application point of an SRAM memory cell, the semiconductor substrate, a word line, and bit lines in a manner such that the voltage (Vdd) becomes a certain value (V1), the substrate voltage (Vsub) becomes 0 V, the word line voltage (Vwl) becomes said value (V1), the bit line voltage (Vbll) becomes 0 V, and the bit line voltage (Vblr) becomes said value (V1) (step S100). The voltage difference between the source-voltage application point and one of the bit lines is set to a voltage difference (V1h) which is larger than the normal voltage difference (V1) and the voltage difference between the word line and the one of the bit lines is set to the normal voltage difference (V1) which is smaller than said voltage (V1h), and electrons are injected to an insulating layer close to the diffusion layer that is connected to the output terminal of an inverter constituting the memory cell and that is one of the diffusion layers constituting the source and the drain of a pass gate transistor connected to the one of the bit lines (step S110). Thus, the operating characteristics of the memory cell can be improved.
Inventors:
TAKEUCHI, Ken (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
竹内 健 (〒54 東京都文京区本郷七丁目３番１号 国立大学法人東京大学内 Tokyo, 〒1138654, JP)
MIYAJI, Kosuke (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
宮地 幸祐 (〒54 東京都文京区本郷七丁目３番１号 国立大学法人東京大学内 Tokyo, 〒1138654, JP)
竹内 健 (〒54 東京都文京区本郷七丁目３番１号 国立大学法人東京大学内 Tokyo, 〒1138654, JP)
MIYAJI, Kosuke (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
宮地 幸祐 (〒54 東京都文京区本郷七丁目３番１号 国立大学法人東京大学内 Tokyo, 〒1138654, JP)
Application Number:
JP2011/061761
Publication Date:
December 01, 2011
Filing Date:
May 23, 2011
Export Citation:
Assignee:
The University of Tokyo (3-1 Hongo 7-chome, Bunkyo-ku Tokyo, 54, 〒1138654, JP)
国立大学法人東京大学 (〒54 東京都文京区本郷七丁目３番１号 Tokyo, 〒1138654, JP)
TAKEUCHI, Ken (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
竹内 健 (〒54 東京都文京区本郷七丁目３番１号 国立大学法人東京大学内 Tokyo, 〒1138654, JP)
MIYAJI, Kosuke (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
国立大学法人東京大学 (〒54 東京都文京区本郷七丁目３番１号 Tokyo, 〒1138654, JP)
TAKEUCHI, Ken (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
竹内 健 (〒54 東京都文京区本郷七丁目３番１号 国立大学法人東京大学内 Tokyo, 〒1138654, JP)
MIYAJI, Kosuke (3-1 Hongo 7-chome, Bunkyo-k, Tokyo 54, 〒1138654, JP)
International Classes:
G11C11/41; G11C11/413; G11C16/04; G11C16/06; H01L21/8244; H01L27/11; H02M3/07
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (Gotanda Daiichiseimei Bldg, 19-3 Nishigotanda 2-chome, Shinagawa-k, Tokyo 31, 〒1410031, JP)
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Claims: