Title:
METHOD FOR REMOVAL OF ETHYLENE OXIDE FROM EXHAUST GAS AND APPARATUS FOR THE REMOVAL
Document Type and Number:
WIPO Patent Application WO/2007/077742
Kind Code:
A1
Abstract:
Disclosed are: a method for removing ethylene oxide contained in an exhaust gas discharged
from a facility that discharges an ethylene oxide-containing exhaust gas, in
a simple and safe manner; and an apparatus for the removal. The method for removing
ethylene oxide from an ethylene oxide-containing exhaust gas comprises introducing
the exhaust gas into a flame-free, high-temperature reaction treatment area,
while supplying an oxygen-containing gas to the reaction treatment area, thereby
decomposing ethylene oxide contained in the exhaust gas in the reaction treatment
area. The method enables to decrease the ethylene oxide concentration in an exhaust
gas to a level falling within the range from 0.1% by volume to 100 ppm by volume inclusive.
Inventors:
HAYASHI HIDEO (JP)
GOTOH JUICHI (JP)
NAKAMURA HIROSHI (JP)
GOTOH JUICHI (JP)
NAKAMURA HIROSHI (JP)
Application Number:
PCT/JP2006/325419
Publication Date:
July 12, 2007
Filing Date:
December 20, 2006
Export Citation:
Assignee:
TOAGOSEI CO LTD (JP)
HAYASHI HIDEO (JP)
GOTOH JUICHI (JP)
NAKAMURA HIROSHI (JP)
HAYASHI HIDEO (JP)
GOTOH JUICHI (JP)
NAKAMURA HIROSHI (JP)
International Classes:
B01D53/72; B01D53/34; C07B37/06; C07D303/04
Foreign References:
| JPS613915A | 1986-01-09 | |||
| JP2003267970A | 2003-09-25 | |||
| JPH0118200A | ||||
| JPH04290519A | 1992-10-15 |
Attorney, Agent or Firm:
KOJIMA, Seiji (7-26 Jingu 3-chome, Atsuta-k, Nagoya-shi Aichi 31, JP)
Download PDF:
Previous Patent: TRANSDERMALLY ABSORBABLE PREPARATION
Next Patent: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Next Patent: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE