METHOD FOR REMOVING IMPURITIES FROM FLUX

WIPO Patent Application WO/2010/126016

A1

Disclosed is a method for removing impurities from a flux, which is characterized in that the impurities in the flux are reduced by heating and melting the flux containing the impurities and blowing a gas that contains water vapor and/or oxygen into the molten flux. The method is capable of effectively reducing impurities, especially B in a flux that is used for the production of high-purity Si for solar cells by a metallurgical process. A flux obtained by the method contains an extremely small amount of B or does not substantially contain B. Consequently, by using this method when high-purity Si for solar cells is produced by a metallurgical process, a large amount of B in Si can be easily and quickly removed therefrom. Then, P is volatilized and removed from the Si, from which B has been removed, in a high vacuum by local high-temperature heating or the like. After that, metal impurities in the Si are reduced by unidirectional solidification or the like, thereby obtaining high-purity Si, which has a purity of about 6N and is usable for a solar cell, at extremely low cost.

HATAYAMA KAZUHISA (JP)

PCT/JP2010/057409

November 04, 2010

April 27, 2010

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SHINETSU CHEMICAL CO (JP)
HATAYAMA KAZUHISA (JP)

C01B13/16; B22D25/04; C01B33/037; C01B33/12; C22B9/05

JP2009057240A	2009-03-19
JP2007261944A	2007-10-11
JP2006027923A	2006-02-02
JP2003238138A	2003-08-27
JP2003012317A	2003-01-15
JPH09202611A	1997-08-05

KOJIMA TAKASHI (JP)
Takashi Kojima (JP)

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