Title:
METHOD FOR REMOVING IMPURITIES FROM FLUX
Document Type and Number:
WIPO Patent Application WO/2010/126017
Kind Code:
A1
Abstract:
Disclosed is a method for removing impurities from a flux, which is characterized in that the impurities in the flux are reduced by heating and melting the flux containing the impurities and blowing a processing gas that contains a halogen gas into the flux.
The method is capable of effectively reducing impurities, especially boron and phosphorus in a flux that is used for the production of high-purity silicon for solar cells and the like by a metallurgical process. As a result, a flux in which boron, phosphorus and the like are reduced can be obtained at extremely low cost.
Inventors:
HATAYAMA Kazuhisa (Shin-Etsu Chemical Co. Ltd., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)
Application Number:
JP2010/057410
Publication Date:
November 04, 2010
Filing Date:
April 27, 2010
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd. (6-1 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越化学工業株式会社 (〒04 東京都千代田区大手町二丁目６番１号 Tokyo, 〒1000004, JP)
信越化学工業株式会社 (〒04 東京都千代田区大手町二丁目６番１号 Tokyo, 〒1000004, JP)
International Classes:
C01B13/16; B22D25/04; C01B33/037; C01B33/12; C22B9/05
Attorney, Agent or Firm:
KOJIMA Takashi (GINZA OHTSUKA Bldg. 2F, 16-12 Ginza 2-chome, Chuo-k, Tokyo 61, 〒1040061, JP)
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