Title:
METHOD FOR REMOVING IMPURITIES FROM FLUX
Document Type and Number:
WIPO Patent Application WO/2010/126017
Kind Code:
A1
Abstract:
Disclosed is a method for removing impurities from a flux, which is characterized in that the impurities in the flux are reduced by heating and melting the flux containing the impurities and blowing a processing gas that contains a halogen gas into the flux.
The method is capable of effectively reducing impurities, especially boron and phosphorus in a flux that is used for the production of high-purity silicon for solar cells and the like by a metallurgical process. As a result, a flux in which boron, phosphorus and the like are reduced can be obtained at extremely low cost.
Inventors:
HATAYAMA KAZUHISA (JP)
Application Number:
PCT/JP2010/057410
Publication Date:
November 04, 2010
Filing Date:
April 27, 2010
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
HATAYAMA KAZUHISA (JP)
HATAYAMA KAZUHISA (JP)
International Classes:
C01B13/16; B22D25/04; C01B33/037; C01B33/12; C22B9/05
Foreign References:
| JP2009057240A | 2009-03-19 | |||
| JP2007261944A | 2007-10-11 | |||
| JP2006027923A | 2006-02-02 | |||
| JP2003238138A | 2003-08-27 | |||
| JP2003012317A | 2003-01-15 | |||
| JPH09202611A | 1997-08-05 |
Attorney, Agent or Firm:
KOJIMA TAKASHI (JP)
Takashi Kojima (JP)
Takashi Kojima (JP)
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