METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND

WIPO Patent Application WO/2008/029736

A1

This invention provides a method for separating a surface layer of diamond, characterized by comprising implanting ions into diamond to form a nondiamond layer in a part around the surface of the diamond, then applying an alternating current across electrodes in an electrolysis solution to etch the nondiamond layer of the diamond. There is also provided a method for separating a growth layer of diamond, comprising the step of, after the formation of the nondiamond layer by the above method, further growing diamond by a gaseous phase synthesis method. The above method can be applied to various single crystal and polycrystalline diamonds. In particular, even a large single crystal diamond, a part of the single crystal diamond can be separated in a reutilizable form in a relatively short time with high efficiency.

MOKUNO, Yoshiaki (8-31 Midorigaoka 1-chome, Ikeda-sh, Osaka 77, 5638577, JP)
杢野 由明 (〒77 大阪府池田市緑丘１丁目８番３１号 独立行政法人産業技術総合研究所 関西センター内 Osaka, 5638577, JP)
CHAYAHARA, Akiyoshi (8-31 Midorigaoka 1-chome, Ikeda-sh, Osaka 77, 5638577, JP)

JP2007/067023

March 13, 2008

August 31, 2007

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NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku Tokyo, 21, 1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関一丁目３番１号 Tokyo, 1008921, JP)
MOKUNO, Yoshiaki (8-31 Midorigaoka 1-chome, Ikeda-sh, Osaka 77, 5638577, JP)
杢野 由明 (〒77 大阪府池田市緑丘１丁目８番３１号 独立行政法人産業技術総合研究所 関西センター内 Osaka, 5638577, JP)

C30B29/04; C23C16/56; C25F3/02

SAEGUSA, Eiji et al. (Kitahama TNK Building, 1-7-1 Doshomachi, Chuo-k, Osaka-shi Osaka 45, 5410045, JP)

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