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Title:
METHOD FOR SEVERING BRITTLE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/084614
Kind Code:
A1
Abstract:
A trench line (TL) is formed by moving a cutting edge (51) over an upper surface (SF1) and causing plastic deformation. The process of forming the trench line (TL) is performed such that a state of cracklessness is obtained. The process of forming the trench line (TL) includes a process of forming a low load region (LR) and a high load region (HR). The load applied to the cutting edge (51) in the process of forming the high load region (HR) is higher than the load used in the process of forming the low load region (LR). A crack line is formed along a portion of the trench line (TL) by extending a crack only in the high load region (HR) of the trench line (TL). A glass substrate (11) is severed along the trench line (TL). The process of severing the glass substrate (11) includes a process of extending the crack along the low load region (LR) with the crack line being a starting point.

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Inventors:
SOYAMA HIROSHI (JP)
Application Number:
PCT/JP2015/081858
Publication Date:
June 02, 2016
Filing Date:
November 12, 2015
Export Citation:
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Assignee:
MITSUBOSHI DIAMOND IND CO LTD (JP)
International Classes:
C03B33/023; B28D5/00
Domestic Patent References:
WO2008136239A12008-11-13
Foreign References:
JP2004359502A2004-12-24
JP2008201629A2008-09-04
JP2012000793A2012-01-05
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
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