Title:
METHOD OF SURFACE RECONSTRUCTION FOR SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2006/137192
Kind Code:
A1
Abstract:
A method of surface reconstruction for silicon carbide substrate (1), comprising the silicon film formation step of forming silicon film (2) on a surface of the silicon carbide substrate (1) and the heat treatment step of carrying out heat treatment of the silicon carbide substrate (1) and silicon film (2) without disposing of a polycrystalline silicon carbide substrate on the surface of the silicon film (2). After the heat treatment step, there may be carried out the silicon film removal step of removing the silicon film (2). Further, after the heat treatment step, there may be carried out the silicon oxide film formation step of oxidizing the silicon film (2) into a silicon oxide film and the silicon oxide film removal step of removing the silicon oxide film.
Inventors:
MASUDA TAKEYOSHI (JP)
Application Number:
PCT/JP2006/303936
Publication Date:
December 28, 2006
Filing Date:
March 02, 2006
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
MASUDA TAKEYOSHI (JP)
MASUDA TAKEYOSHI (JP)
International Classes:
C30B29/36; C23C14/14; C23C16/24; C30B33/02; C30B33/10
Foreign References:
| JP2001130998A | 2001-05-15 | |||
| JP2004172556A | 2004-06-17 | |||
| JP2005126248A | 2005-05-19 | |||
| JP2003300797A | 2003-10-21 | |||
| JP2001158697A | 2001-06-12 | |||
| JP2004292305A | 2004-10-21 |
Attorney, Agent or Firm:
Fukami, Hisao (Nakanoshima Central Tower,, 22nd Floor, 2-7,,
Nakanoshima 2-chome, Kita-ku, Osaka-shi Osaka 05, JP)
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