Title:
METHOD FOR SURFACE-TREATING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SOLAR BATTERY
Document Type and Number:
WIPO Patent Application WO/2012/002440
Kind Code:
A1
Abstract:
Provided is a method for surface-treating a semiconductor substrate to thereby reduce loss of minority carriers caused by surface recombination and improve the lifetime, said surface-treatment method comprising a hydrogen treatment step for hydrogen-terminating dangling bonds on the surface of the conductor substrate, and a hot water-treatment step for contacting the surface of said semiconductor substrate, the dangling bonds of which have been hydrogen-terminated as described above, with hot water containing an acid additive and an alkali additive and having a pH value equal to or lower than 7.
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Inventors:
KUROBE KENICHI (JP)
Application Number:
PCT/JP2011/064921
Publication Date:
January 05, 2012
Filing Date:
June 29, 2011
Export Citation:
Assignee:
KYOCERA CORP (JP)
KUROBE KENICHI (JP)
KUROBE KENICHI (JP)
International Classes:
H01L21/304; H01L21/306
Foreign References:
| JPH1160377A | 1999-03-02 | |||
| JP2010051900A | 2010-03-11 |
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Claims: