Title:
METHOD AND SYSTEM FOR ADJUSTING A CHEMICAL OXIDE REMOVAL PROCESS USING PARTIAL PRESSURE
Document Type and Number:
WIPO Patent Application WO2005104215
Kind Code:
A3
Abstract:
A method and system for trimming a feature on a substrate. During a chemical treatment of the substrate, the substrate is exposed to a reactive gaseous chemistry, such as HF/NH3, under controlled conditions. An inert gas can also be introduced with the reactant gaseous chemistry. A process model is developed for an aspect of the first reactant, an aspect of the second reactant, and an aspect of the optional inert gas. Upon specifying a target trim amount, the process model is utilized to determine a process recipe for achieving the specified target.
Inventors:
YUE HONGYU (US)
Application Number:
PCT/US2005/004036
Publication Date:
December 22, 2005
Filing Date:
February 08, 2005
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
YUE HONGYU (US)
YUE HONGYU (US)
International Classes:
H01L21/66; (IPC1-7): H01L21/66
Foreign References:
| US6071815A | 2000-06-06 | |||
| US5926690A | 1999-07-20 | |||
| US20030230551A1 | 2003-12-18 |
Other References:
SENDELBACH M ET AL: "FEEDFORWARD OF MASK OPEN MEASUREMENTS ON AN INTEGRATED SCATTEROMETER TO IMPROVE GATE LINEWIDTH CONTROL", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 5375, no. PART 1, 24 May 2004 (2004-05-24), pages 686 - 702, XP002324242, ISSN: 0277-786X
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